vishay siliconix sup90n04-2m8p new product document number: 69989 s-80681-rev. a, 31-mar-08 www.vishay.com 1 n-channel 40-v (d-s) mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested applications ? synchronous rectification ? power supplies product summary v ds (v) r ds(on) ( ) i d (a) a, c q g (typ.) 40 0.0028 at v gs = 10 v 90 240 nc 0.003 at v gs = 4.5 v 90 ordering information: SUP90N04-2M8P-E3 (lead (pb)-free) to-220ab top view gd s n-channel mosfet g d s notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. calculated based on maximum junction temper ature. package limitation current is 110 a. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 90 a, c a t c = 70 c 90 c t a = 25 c 25 b t a = 70 c 20 b pulsed drain current i dm 250 avalanche current pulse l = 0.1 mh i as 80 single pulse avalanche energy e as 320 v continuous source-drain diode current t c = 25 c i s 90 a, c a t a = 25 c 2.6 b maximum power dissipation t c = 25 c p d 312 a w t c = 70 c 200 t a = 25 c 3.13 b t a = 70 c 2.0 b operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b steady state r thja 32 40 c/w maximum junction-to-case steady state r thjc 0.33 0.4 rohs compliant
www.vishay.com 2 document number: 69989 s-80681-rev. a, 31-mar-08 vishay siliconix sup90n04-2m8p new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 v v ds temperature coefficient v ds /t j i d = 250 a 41 mv/c v gs(th) temperature coefficient v gs(th) /t j - 8 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a 0.0023 0.0028 v gs = 4.5 v, i d = 20 a 0.0025 0.003 forward transconductance a g fs v ds = 15 v, i d = 30 a 180 s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz 18800 pf output capacitance c oss 1550 reverse transfer capacitance c rss 850 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 20 a 240 360 nc gate-source charge q gs 40 gate-drain charge q gd 22 gate resistance r g f = 1 mhz 0.85 1.3 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 1.0 i d ? 20 a, v gen = 10 v, r g = 1 20 30 ns rise time t r 11 17 turn-off delay time t d(off) 77 115 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 1.0 i d ? 20 a, v gen = 4.5 v, r g = 1 102 155 rise time t r 62 95 turn-off delay time t d(off) 180 270 fall time t f 60 90 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 90 a pulse diode forward current a i sm 200 body diode voltage v sd i s = 20 a 0.8 1.2 v body diode reverse recovery time t rr i f = 20 a, di/dt = 100 a/s, t j = 25 c 50 75 ns body diode reverse recovery charge q rr 70 105 nc reverse recovery fall time t a 30 ns reverse recovery rise time t b 20
document number: 69989 s-80681-rev. a, 31-mar-08 www.vishay.com 3 vishay siliconix sup90n04-2m8p new product typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance 0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0 2.5 v ds -- drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10thr u 5 v v gs =3 v v gs =4 v 0 8 0 160 240 320 400 0 153045607590 i d - drain c u rrent (a) - transcond u ctance (s) g fs t c = 125 c t c = - 55 c t c = 25 c c rss 0 8 000 16000 24000 0 10203040 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss transfer characteristics on-resistance vs. drain current gate charge 0 1 2 3 4 5 01234 v gs - g a t e - t o - s o u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = - 55 c t c = 125 c 0.0000 0.000 8 0.0016 0.0024 0.0032 0.0040 0.004 8 0 204060 8 0 100 120 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v 0 2 4 6 8 10 0 50 100 150 200 250 i d =20a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =30 v v ds =20 v v ds =10 v
www.vishay.com 4 document number: 69989 s-80681-rev. a, 31-mar-08 vishay siliconix sup90n04-2m8p new product typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =10 v i d =30a v gs =4.5 v 0.000 0.002 0.004 0.006 0.00 8 0.010 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j =25 c t j = 150 c forward diode voltage vs. temperature threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 1.0 - 0.6 - 0.2 0.2 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma safe operating area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1 10 100 - drain c u rrent (a) i d v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 ms, dc 10 ms t c = 25 c single p u lse 1ms 10 s 100 s b v dss limited b yr ds(on) *
document number: 69989 s-80681-rev. a, 31-mar-08 www.vishay.com 5 vishay siliconix sup90n04-2m8p new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69989. current derating* 0 60 120 1 8 0 240 300 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power derating 0 50 100 150 200 250 300 350 400 0 25 50 75 100 125 150 t j -j u nction to case (c) po w er ( w ) normalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance single p u lse 0.1 10 -3 10 -2 1 10 -1 10 -4 0.05 0.02
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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